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| MA1046-1 For 1.9 GHz - Power Amplifier MA1046-1 2. Electrical Performances (Tc = +25C, VD 1, 2 = 6V, VD3 = 10V, VG 1, 2 = -5V, VG 3 = -3V, Zg = Zl = 50) No. 1 Items Frequency Power Gain Temperature Characteristics (Power Gain) Gain Variation Drain Current Gate Current ACP 600 kHz 900 kHz 8 9 10 Occupied Band Width Input VSWR Spurious In Band Out Band 2 nd 3 rd 11 12 Stability against load variation Intensity against load variation G ID 12 ID 3 6 7 IG 12 IG 3 ACP1 ACP2 --- in --- --- 2 SP 3 SP --- --- Po = +35 dBm Load VSWR = 1:3 All Phase Po = +35 dBm Zl = OPEN, SHORT 10 seconds each Po = +35 dBm Non-modulation < f = 6 GHz Symbol f G Po = +35 dBm / 4 Shift QPSK Modulation -PN9 Condition Standard Min 1895 33 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Type --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max 1918 --- 2 0.5 400 1400 2 5 -65 -70 288 2.0 -70 -60 -30 -45 Unit MHz dB dB dB mA mA mA mA dBc dBc KHz --- dBc dBc dBc dBc DESCRIPTION The MA1046-1 is a 1.9 GHz band power amplifier (Po = +3.1W), constructed by 3 stages of GaAs MESFET, RF matching circuit, and DC bias circuit. The shield cap is made of metal. Input and Output impedances are designed to 50. OUTLINE DRAWING 62 Max. 57 1.8 3.6 21 Max. 2 25 Max. MA1046-1 10 a 0.5 b c d e f g h i 19.5 3 4 5 FEATURES Po = +35.0 dBm, Gain = +32 dB (min.) @1.9 GHz Vd1, 2 = +6.0V, Vd3 = +10.0V Vg1, 2 = -5.0V, Vg3 = 3.0V 2 8 5 5 10 5 5 10 5 8 1 RF IN 1.2 50 Max. 2 GND 3 VG12 4 VD12 5 GND 6 VG3 7 VD3 8 RF OUT 9 GND (base) 8 Max. 2.5 Unit : mm APPLICATION Power amplifier for PHS base station/Japan. Note: 1. Dimension of leads: 0.25 x 0.5 2. Tolerance of dimension of leads interval: 0.3 3. Tolerance of dimension except indications: 0.3 4. Surface Leads : Tin Plating (Iron) (Material) 4 There is no abnormal oscillating signal more than -60 dBc There is no damage MA1046-1 Pin - Pout. ACP. Amplifier Specifications (MA1046-1) 1. Maximum Ratings (Ta=25C) No. 1 2 3 4 5 Items Case temperature Storage temperature Voltage Gate Voltage Input Power Symbol Tc Tstg VD12, VD 3 VG 12, VG 3 Pin VG 12 = -5.0 V, VG 3 = -3.0 V VD 12 = 6.0 V, VD 3 = 10.0 V Condition Standard -20 ~ +70 -40 ~ +95 VD 12 = 7.0 V, VD 3 = 11.0 V VG 12 = -8.0 V, VG = -8.0 V +10 dBm Unit C V V dBm Output Power [dBm] Typical Characteristics 39 VD12 = 6 V, VD3 = 10 V VG12 = -5 V, VG3 = -3 V 35 PO 31 C 27 60 23 40 19 20 0 -11 -7 -3 1 Input Power [dBm] 5 9 - 88 - - 89 - Additional Effciency [%] |
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